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Ceramic processing through the combined use of pressure and water offers a promising approach to achieve accelerated mass transport between ceramic particles at reduced temperatures, providing a sustainable and low‐temperature method for ceramic synthesis and three‐dimensional printing. While previous studies have explored the roles of pressure and water in the fusion and densification of ceramic particles, the underlying mechanisms, especially for micro‐sized ceramic particles, are still debated. This paper aims to propose a potential mechanism for the fusion and densification of micro‐sized ceramic particles under the effect of pressure and water. Using a multi‐phase level‐set simulation model, our results suggest that stress‐assisted fracture and dissolution of interparticle contact points can be key factors driving the densification of micro‐sized ceramic particles in the presence of pressure and water. 

Abstract Direct ink writing (DIW) process is a facile additive manufacturing technology to fabricate three-dimensional (3D) objects with various materials. Its versatility has attracted considerable interest in academia and industry in recent years. As such, upsurging endeavors are invested in advancing the ink flow behaviors in order to optimize the process resolution and the printing quality. However, so far, the physical phenomena during the DIW process are not revealed in detail, leaving a research gap between the physical experiments and its underlying theories. Here, we present a comprehensive analytical study of non-Newtonian ink flow behavior during the DIW process. Different syringe-nozzle geometries are modeled for the comparative case studies. By using the computational fluid dynamics (CFD) simulation method, we reveal the shear-thinning property during the ink extrusion process. Besides, we study the viscosity, shear stress, and velocity fields, and analyze the advantages and drawbacks of each syringe-nozzle model. On the basis of these investigations and analyses, we propose an improved syringe-nozzle geometry for stable extrusion and high printing quality. A set of DIW printing experiments and rheological characterizations are carried out to verify the simulation studies. The results developed in this work offer an in-depth understanding of the ink flow behavior in the DIW process, providing valuable guidelines for optimizing the physical DIW configuration toward high-resolution printing and, consequently, improving the performance of DIW-printed objects. 

Abstract As a facile and versatile additive manufacturing technology, direct ink writing (DIW) has attracted considerable interest in academia and industry to fabricate three-dimensional structures with unique properties and functionalities. However, so far, the physical phenomena during the DIW process are not revealed in detail, leaving a research gap between the physical experiments and the underlying theories. Here, we presented a comprehensive simulation study of non-Newtonian ink flow during the DIW process. We used the computational fluid dynamics (CFD) method and revealed the shear-thinning behavior during the extrusion process. Different nozzle geometry models were adopted in the simulation. The advantages and drawbacks of each syringe-nozzle geometry were analyzed. In addition, the ink shear stress and velocity fields were investigated and compared in the case studies. Based on these investigations and analysis, we proposed an improved syringe-nozzle geometry towards high-resolution DIW. Consequently, the high-resolution and high shape fidelity DIW could enhance the DIW product performance. The results developed in this work offer valuable guidelines and could accelerate further advancement of DIW. 

Abstract The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved. Here, we fabricate 3 × 3 arrays of single/few-dopant quantum dots with finite disorder and demonstrate tuning of the electron ensemble using gates and probe the many-body states using quantum transport measurements. By controlling the lattice constants, we tune the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from metallic to Mott insulating behavior. We simulate thermally activated hopping and Hubbard band formation using increased temperatures. As atomically precise fabrication continues to improve, these results enable a new class of engineered artificial lattices to simulate interactive fermionic models. 

Abstract Terahertz (THz) technology is critical for quantum material physics, biomedical imaging, ultrafast electronics, and next‐generation wireless communications. However, standing in the way of widespread applications is the scarcity of efficient ultrafast THz sources with on‐demand fast modulation and easy on‐chip integration capability. Here the discovery of colossal THz emission is reported from a van der Waals (vdW) ferroelectric semiconductor NbOI₂. Using THz emission spectroscopy, a THz generation efficiency an order of magnitude higher than that of ZnTe, a standard nonlinear crystal for ultrafast THz generation is observed. The underlying generation mechanisms associated are further uncovered with its large ferroelectric polarization by studying the THz emission dependence on excitation wavelength, incident polarization, and fluence. Moreover, the ultrafast coherent amplification and annihilation of the THz emission and associated coherent phonon oscillations by employing a double‐pump scheme are demonstrated. These findings combined with first‐principles calculations, inform a new understanding of the THz light–matter interaction in emergent vdW ferroelectrics and pave the way to develop high‐performance THz devices on them for quantum materials sensing and ultrafast electronics.